High-Performance Phototransistors Based on PDIF-CN2 Solution-Processed Single Fiber and Multifiber Assembly

Accès libre Peer reviewed | |
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Version acceptée pour publication (post-print auteur) | |
Paternité - Pas d'utilisation commerciale [CC] [BY] [NC] | |
Auteurs |
Wassima Rekab Marc-Antoine Stoeckel Mirella El Gemayel Marco Gobbi Emanuele Orgiu Paolo Samori |
Unité de recherche du site |
Institut de Science et d'Ingénierie Supramoléculaires - ISIS - UMR7006 |
Langue |
en |
Volume |
8 |
Numéro |
15 |
Page de début |
9829 |
Page de fin |
9838 |
Date de première publication |
2016-03-29 |
ISSN |
1944-8252 |
Titre de la source (revue, livre…) |
ACS Applied Materials & Interfaces |
Résumé |
Here we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution Show moreHere we describe the fabrication of organic phototransistors based on either single or multifibers integrated in three-terminal devices. These self-assembled fibers have been produced by solvent-induced precipitation of an air stable and solution-processable perylene di-imide derivative, i.e., PDIF-CN2. The optoelectronic properties of these devices were compared to devices incorporating more disordered spin-coated PDIF-CN2 thin-films. The single-fiber devices revealed significantly higher field-effect mobilities, compared to multifiber and thin-films, exceeding 2 cm2 V–1 s–1. Such an efficient charge transport is the result of strong intermolecular coupling between closely packed PDIF-CN2 molecules and of a low density of structural defects. The improved crystallinity allows efficient collection of photogenerated Frenkel excitons, which results in the highest reported responsivity (R) for single-fiber PDI-based phototransistors, and photosensitivity (P) exceeding 2 × 103 AW–1, and 5 × 103, respectively. These findings provide unambiguous evidence for the key role played by the high degree of order at the supramolecular level to leverage the material’s properties toward the fabrication of light-sensitive organic field-effect transistors combining a good operational stability, high responsivity and photosensitivity. Our results show also that the air-stability performances are superior in devices where highly crystalline supramolecularly engineered architectures serve as the active layer. Show less |
DOI | 10.1021/acsami.6b01254 |
URL éditeur |
http://pubs.acs.org/doi/abs/10.1021/acsami.6b01254 |
Titre abrégé de la source |
ACS Appl. Mater. Interfaces |
Type de publication |
ACL |
Topic |
Chimie/Matériaux |
Mots-clés |
organic field-effect transistor |
Fonction |
aut |
Identifiant idREF |
179777114 19105190X 109288335 |
Audience |
International |
URL | https://univoak.eu/islandora/object/islandora:51513 |