Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols

Bertolazzi, S., Bonacchi, S., Nan, G., Pershin, A., Beljonne, D., & Samori, P. (sans date). Engineering Chemically Active Defects in Monolayer MoS2 Transistors via Ion-Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols. Advanced Materials, 29(18), 1606760. doi:10.1002/adma.201606760
Accès libre Peer reviewed
Version acceptée pour publication (post-print auteur)
Paternité - Pas d'utilisation commerciale [CC] [BY] [NC]
Auteurs Simone Bertolazzi
Sara Bonacchi
Guangjun Nan
Anton Pershin
David Beljonne
Paolo Samori
Unité de recherche du site

Institut de Science et d'Ingénierie Supramoléculaires - ISIS - UMR7006
Laboratory for Chemistry of Novel Materials; Université de Mons; Place du Parc 20 7000 Mons Belgium
URL éditeur http://onlinelibrary.wiley.com/doi/10.1002/adma.201606760/abstract
Langue

en
Volume

29
Numéro

18
Page de début

1606760
Date de première publication

2017-03-01
ISSN

09359648
Titre de la source (revue, livre…)

Advanced Materials
Résumé

Irradiation of 2D sheets of transition metal dichalcogenides with ion beams has emerged as an effective approach to engineer chemically active defects in 2D materials. In this context, argon-ion bombardment has been utilized to introduce sulfur
Show moreIrradiation of 2D sheets of transition metal dichalcogenides with ion beams has emerged as an effective approach to engineer chemically active defects in 2D materials. In this context, argon-ion bombardment has been utilized to introduce sulfur vacancies in monolayer molybdenum disulfide (MoS2). However, a detailed understanding of the effects of generated defects on the functional properties of 2D MoS2 is still lacking. In this work, the correlation between critical electronic device parameters and the density of sulfur vacancies is systematically investigated through the fabrication and characterization of back-gated monolayer MoS2 field-effect transistors (FETs) exposed to a variable fluence of low-energy argon ions. The electrical properties of pristine and ion-irradiated FETs can be largely improved/recovered by exposing the devices to vapors of short linear thiolated molecules. Such a solvent-free chemical treatment—carried out strictly under inert atmosphere—rules out secondary healing effects induced by oxygen or oxygen-containing molecules. The results provide a guideline to design monolayer MoS2 optoelectronic devices with a controlled density of sulfur vacancies, which can be further exploited to introduce ad hoc molecular functionalities by means of thiol chemistry approaches.
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DOI 10.1002/adma.201606760
Éditeur

Wiley-VCH Verlag
Titre abrégé de la source

Adv. Mater.
Type de publication

ACL
Projet(s) de recherche ANR

Agence Nationale de la Recherche. Grant Number: ANR-10-LABX-0026_CSC
Projet(s) de recherche européen(s)

European Commission. Grant Number: GA-696656 Marie-Curie IEF MULTI2DSWITCH. Grant Number: GA-700802
Domaine

Chimie/Matériaux
Fonction

aut
crp
Identifiant ORCID orcid.org/0000-0001-6256-8281
Audience

International