MoS2 nanosheets via electrochemical lithium-ion intercalation under ambient conditions

EL GARAH, Mohamed, BERTOLAZZI, Simone, IPPOLITO, Stefano, EREDIA, Matilde, JANICA, Iwona, MELINTE, Georgian, ERSEN, Ovidiu, MARLETTA, Giovanni, CIESIELSKI, Artur et SAMORÌ, Paolo, 2018. MoS2 nanosheets via electrochemical lithium-ion intercalation under ambient conditions. FlatChem [en ligne]. mai 2018. Vol. 9, pp. 33-39. [Consultésans date]. DOI 10.1016/j.flatc.2018.06.001. Consulté de : https://doi.org/10.1016/j.flatc.2018.06.001Two-dimensional (2D) transition metal dichalcogenides (TMDs) are continuously attracting attention for both fundamental studies and technological applications. The physical and chemical properties of ultrathin TMD sheets are extraordinarily different from those of the corresponding bulk materials and for this reason their production is a stimulating topic, especially when the preparation method enables to obtain a remarkable yield of nanosheets with large area and high quality. Herein, we present a fast (<1 h) electrochemical exfoliation of molybdenum disulfide (MoS2) via lithium-ion intercalation, by using a solution of lithium chloride in dimethyl sulfoxide (DMSO). Unlike the conventional intercalation methods based on dangerous organolithium compounds, our approach leads to the possibility to obtain mono-, bi- and tri-layer thick MoS2 nanosheets with a large fraction of the semiconducting 2H phase (∼60%), as estimated by X-ray photoelectron spectroscopy (XPS). The electrical properties of the exfoliated material were investigated through the fabrication and characterization of back-gated field-effect transistors (FETs) based on individual MoS2 nanosheets. As-fabricated devices displayed unipolar semiconducting behavior (n-type) with field-effect mobility µFE ≤ 10−3 cm2 V−1 s−1 and switching ratio Ion/Ioff ≤ 10, likely limited by 1T/2H polymorphism and defects (e.g. sulfur vacancies) induced during the intercalation/exfoliation process. A significant enhancement of the electrical performances could be achieved through a combination of vacuum annealing (150 °C) and sulfur-vacancy healing with vapors of short-chain alkanethiols, resulting in µFE up to 2 × 10−2 cm2 V−1 s−1 and Ion/Ioff ≈ 100. Our results pave the way towards the fast preparation – under ambient conditions – of semiconducting MoS2 nanosheets, suitable for application in low cost (opto-)electronic devices.1. .