Current crowding issues on nanoscale planar organic transistors for spintronic applications

VERDUCI, Tindara, CHAUMY, Guillaume, DAYEN, Jean-françois, LECLERC, Nicolas, DEVAUX, Eloïse, STOECKEL, Marc-Antoine, ORGIU, Emanuele, SAMORÌ, Paolo et DOUDIN, Bernard, 2018. Current crowding issues on nanoscale planar organic transistors for spintronic applications. Nanotechnology [en ligne]. septembre 2018. Vol. 29, n° 36pp. 365201. [Consultésans date]. DOI 10.1088/1361-6528/aacc22. Consulté de : http://iopscience.iop.org/article/10.1088/1361-6528/aacc22/metaThe predominance of interface resistance makes current crowding ubiquitous in short channel organic electronics devices but its impact on spin transport has never been considered. We investigate electrochemically doped nanoscale PBTTT short channel devices and observe the smallest reported values of crowding lengths, found for sub-100 nm electrodes separation. These observed values are nevertheless exceeding the spin diffusion lengths reported in the literature. We discuss here how current crowding can be taken into account in the framework of the Fert–Jaffrès model of spin current propagation in heterostructures, and predict that the anticipated resulting values of magnetoresistance can be significantly reduced. Current crowding therefore impacts spin transport applications and interpretation of the results on spin valve devices.1. .
Accès restreint (28-12-2018) Peer reviewed
Version acceptée pour publication (post-print auteur)
Paternité - Pas d'utilisation commerciale [CC] [BY] [NC]
Auteurs Tindara Verduci
Guillaume Chaumy
Jean-françois Dayen
Nicolas Leclerc
Eloïse Devaux
Marc-Antoine Stoeckel
Emanuele Orgiu
Paolo Samorì
Bernard Doudin
Unité de recherche du site

Institut de Physique et Chimie des Matériaux de Strasbourg - IPCMS - UMR7504
Institut de chimie et procédés pour l'énergie l'environnement et la santé - ICPEES - UMR7515
Institut de Science et d'Ingénierie Supramoléculaires - ISIS - UMR7006
URL éditeur http://iopscience.iop.org/article/10.1088/1361-6528/aacc22/meta
Langue

en
Volume

29
Numéro

36
Page de début

365201
Date de première publication

2018-06-29
Date de parution

2018-09
ISSN

0957-4484
1361-6528
Titre de la source (revue, livre…)

Nanotechnology
Résumé

The predominance of interface resistance makes current crowding ubiquitous in short channel organic electronics devices but its impact on spin transport has never been considered. We investigate electrochemically doped nanoscale PBTTT short channel
Show moreThe predominance of interface resistance makes current crowding ubiquitous in short channel organic electronics devices but its impact on spin transport has never been considered. We investigate electrochemically doped nanoscale PBTTT short channel devices and observe the smallest reported values of crowding lengths, found for sub-100 nm electrodes separation. These observed values are nevertheless exceeding the spin diffusion lengths reported in the literature. We discuss here how current crowding can be taken into account in the framework of the Fert–Jaffrès model of spin current propagation in heterostructures, and predict that the anticipated resulting values of magnetoresistance can be significantly reduced. Current crowding therefore impacts spin transport applications and interpretation of the results on spin valve devices.
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DOI 10.1088/1361-6528/aacc22
Éditeur

IOP Publishing
Titre abrégé de la source

Nanotechnology
Type de publication

ACL
Projet(s) de recherche ANR

Agence Nationale de la Recherche (MULTISELF 11-BS08-06, Labex NIE 11-LABX-0058_NIE within the Investissement d’Avenir program ANR-10-IDEX- 0002-02)
Domaine

Chimie/Matériaux
Mots-clés

current crowding
nanodevices
organic electronics
spintronics
spin valve
PMID 29894980
Équipes de recherche

E3 - DMONS : Département magnétisme des objets nanostructurés
Fonction

aut
Identifiant ORCID 0000-0001-6256-8281
0000-0002-0657-4780
Audience

International